Premium
Interface diffusion and chemical reaction on the interface of a PZT film/Si(III) sample during annealing treatment in N 2 and vacuum
Author(s) -
Zhu Yongfa,
Yan Peiyu,
Yi Tao,
Cao Lili,
Li Longtu
Publication year - 1999
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199911)27:11<972::aid-sia661>3.0.co;2-2
Subject(s) - annealing (glass) , lead zirconate titanate , oxygen , activation energy , analytical chemistry (journal) , materials science , diffusion , chemistry , chemical engineering , ferroelectricity , composite material , optoelectronics , thermodynamics , chromatography , organic chemistry , physics , engineering , dielectric
Interface diffusion and chemical reaction between a lead zirconate titanate (PZT) layer and an Si substrate during annealing treatment in N 2 or in a vacuum were studied using AES depth profile and lineshape analysis techniques. The results indicated that annealing treatment in a high vacuum was able to inhibit interface diffusion and oxidation completely. Annealing treatment in N 2 can reduce interface oxidation of Si substrate and interface diffusion significantly but not completely. The residual oxygen in N 2 caused interface diffusion and oxidization, which resulted in the formation of an SiO 2 interlayer. Annealing treatment at a high temperature in N 2 or in a vacuum caused the loss of lattice oxygen in the PZT layer. Interface oxidation was governed mainly by the diffusion of oxygen in the SiO 2 layer, and the apparent activation energy of the interface oxidation was 128.2 kJ mol −1 . Copyright © 1999 John Wiley & Sons, Ltd.