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Indium‐doped zinc oxide films prepared by simultaneous r.f. and d.c. magnetron sputtering
Author(s) -
Zhang Keran,
Zhu Furong,
Huan C. H. A.,
Wee A. T. S.,
Osipowicz T.
Publication year - 1999
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199908)28:1<271::aid-sia592>3.0.co;2-1
Subject(s) - indium , zinc , analytical chemistry (journal) , doping , sputter deposition , rutherford backscattering spectrometry , materials science , cavity magnetron , electrical resistivity and conductivity , atomic force microscopy , thin film , sputtering , oxide , chemistry , optoelectronics , nanotechnology , metallurgy , physics , chromatography , quantum mechanics
Indium‐doped zinc oxide (ZnO:In) films were prepared by simultaneous r.f. and d.c. magnetron sputtering. The structural, optical and electrical properties of the films have been obtained by x‐ray diffractometry (XRD), Rutherford backscattering spectrometry (RBS), spectrophotometry and atomic force microscopy (AFM) together with four‐point probe measurements. The XRD pattern shows ZnO(002) to be the preferred film orientation. The deposited In/Zn atomic ratio is ∼0.4. Uniform ZnO:In films with a resistivity of ∼7 × 10 −4 Ω.cm and a high transparency (>85%) were achieved, with further optimization possible. Copyright © 1999 John Wiley & Sons, Ltd.