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XRR and XPS studies of SiO 2 thin films formed by r.f. magnetron sputtering
Author(s) -
Kojima Isao,
Li Boquan,
Fujimoto Toshiyuki
Publication year - 1999
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199908)28:1<267::aid-sia591>3.0.co;2-o
Subject(s) - x ray photoelectron spectroscopy , x ray reflectivity , sputter deposition , thin film , analytical chemistry (journal) , substrate (aquarium) , surface roughness , argon , sputtering , materials science , deposition (geology) , surface finish , cavity magnetron , chemistry , chemical engineering , nanotechnology , metallurgy , composite material , environmental chemistry , geology , engineering , paleontology , oceanography , organic chemistry , sediment
Grazing‐incidence x‐ray reflectivity has been exploited to study as‐grown SiO 2 thin films deposited on Si(100) substrates by radio‐frequency (r.f.) magnetron sputtering under various substrate temperatures and gas flow conditions. Results indicate that an increase of substrate temperature from room temperature to 763 K only slightly decreases the surface roughness. Comparatively, the surface morphology is strongly controlled by the gas flow conditions during deposition. The surface roughness increases almost linearly from 0.51 to 2.38 nm as the argon gas flow is increased from 8 to 50 sccm. The chemical state and composition of the films were analysed by XPS. Copyright © 1999 John Wiley & Sons, Ltd.