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RHEED studies of MnF 2 epitaxial growth on Si(111) substrates
Author(s) -
Yakovlev N. L.,
Banshchikov A. G.,
Moisseeva M. M.,
Sokolov N. S.,
Beeby J. L.,
Maksym P. A.
Publication year - 1999
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199908)28:1<264::aid-sia590>3.0.co;2-#
Subject(s) - reflection high energy electron diffraction , epitaxy , crystallography , materials science , mineralogy , chemistry , nanotechnology , layer (electronics)
Molecular beam epitaxy was used to grow MnF 2 films on a Si(111) substrate with a thin CaF 2 buffer at room temperature. It was found that films thinner than three molecular layers have a cubic fluorite crystal structure inherited from CaF 2 . The MnF 2 film is coherent to the substrate and has an interlayer spacing of 0.305 ± 0.005 nm, which is 3% less than for bulk CaF 2 . Thicker films have the tetragonal rutile structure, so the film surface is the (110) plane of MnF 2 with its [001] axis parallel to 〈110〉 directions of the substrate. Copyright © 1999 John Wiley & Sons, Ltd.