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Post‐annealing effect in reactive r.f.‐magnetron‐sputtered carbon nitride thin films
Author(s) -
Chen G. L.,
Li Y.,
Lin J.,
Huan C. H. A.,
Guo Y. P.
Publication year - 1999
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199908)28:1<245::aid-sia586>3.0.co;2-i
Subject(s) - x ray photoelectron spectroscopy , analytical chemistry (journal) , annealing (glass) , fourier transform infrared spectroscopy , carbon nitride , crystallite , dangling bond , thin film , sputter deposition , materials science , chemistry , sputtering , crystallography , silicon , chemical engineering , nanotechnology , metallurgy , organic chemistry , photocatalysis , engineering , catalysis
Thin films of CN x were deposited by reactive r.f.‐magnetron sputtering on Si(100) substrates. The effect of annealing temperatures on the structural properties of the films has been studied by Fourier transform infrared (FTIR) spectroscopy, x‐ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Both FTIR and XPS results show that the population of the CN phase decreases upon annealing in a vacuum. The XPS N 1s peaks indicate the component due to the CN bond to be significantly weaker than the others. An increase of the annealing temperature leads to a more prominent peak corresponding to the CN phase in the FTIR absorption spectra. These results suggest a substantial decrease of the weakly bound nitrogen and carbon dangling bonds. Electron diffraction measurements reveal the existence of polycrystalline C 3 N 4 structures in films annealed at 700 °C in a vacuum. The XPS studies confirmed that these crystalline phases are composed exclusively of carbon and nitrogen. Copyright © 1999 John Wiley & Sons, Ltd.