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Crystalline carbon nitride deposition by r.f.‐PECVD using a C 2 H 4 –NH 3 –H 2 source gas mixture
Author(s) -
Lim S. F.,
Wee A. T. S.,
Lin J.,
Chua D. H. C.
Publication year - 1999
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199908)28:1<212::aid-sia579>3.0.co;2-m
Subject(s) - x ray photoelectron spectroscopy , plasma enhanced chemical vapor deposition , crystallinity , carbon nitride , chemical vapor deposition , analytical chemistry (journal) , materials science , amorphous carbon , nitride , amorphous solid , chemistry , crystallography , chemical engineering , nanotechnology , layer (electronics) , organic chemistry , engineering , catalysis , photocatalysis
Carbon nitride films have been deposited on Si(100) substrates by r.f. plasma‐enhanced chemical vapour deposition (r.f.‐PECVD) using an ethylene–ammonia–hydrogen (C 2 H 4 –NH 3 –H 2 ) source gas mixture followed by rapid thermal annealing (RTA) at 1000 °C for 2 min. The films were characterized in terms of chemical bonding, crystallinity, N/C ratio, sp 3 fraction and surface topography by diffused reflectance infrared spectroscopy (DRIFT), x‐ray diffraction (XRD), x‐ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The DRIFT data revealed that, after RTA, N–H, N–C–H, C–H, CN, C–O and CN bonds were reduced but C–N, diamond C–C and N–C=O bonds were formed. The XRD data show growth of crystalline carbon nitride as well as amorphous SiC. The XPS data indicate that the sp 3 fraction on the film surface is maximum at 100 sccm hydrogen flow rate. The AFM data show carbon nitride growth in clusters of sizes 60–70 nm. The DRIFT and XPS data were correlated. Copyright © 1999 John Wiley & Sons, Ltd.