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Raman scattering and room‐temperature visible photoluminescence from Si nanocrystals embedded in SiO 2 thin films
Author(s) -
Wang Yinyue,
Gong Hengxiang,
Yang Yinhu,
Guo Yongping,
Gan Runjin
Publication year - 1999
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199908)28:1<204::aid-sia608>3.0.co;2-o
Subject(s) - photoluminescence , materials science , annealing (glass) , raman spectroscopy , raman scattering , silicon , nanocrystal , wafer , optoelectronics , sputtering , thin film , analytical chemistry (journal) , nanotechnology , optics , composite material , chemistry , physics , chromatography
Silicon nanocrystals (nc‐Si) embedded in SiO 2 glassy mixture have been prepared on glass substrates and silicon and germanium wafers by r.f. co‐sputtering and post‐annealing in a vacuum. Using Raman spectrometry, photoluminescence and electrical conductivity measurements, we have investigated the structures and the optical properties of the Si/SiO 2 composite films. The results show that Si nanocrystals could be formed in Si/SiO 2 composite films by thermal annealing. The growth of nc‐Si is associated with annealing temperature and silicon content. As the size of nc‐Si reaches 5 nm, the intensity of photoluminescence at room temperature is at a maximum and the emitting photon energy is 2.15 eV. Copyright © 1999 John Wiley & Sons, Ltd.