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Laser‐induced formation of titanium silicides
Author(s) -
Chen S. Y.,
Shen Z. X.,
Chen Z. D.,
See A. K.,
Chan L. H.,
Zhang T. J.,
Tee K. C.
Publication year - 1999
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199908)28:1<200::aid-sia607>3.0.co;2-2
Subject(s) - raman spectroscopy , annealing (glass) , materials science , transmission electron microscopy , laser , thin film , titanium , rutherford backscattering spectrometry , spectroscopy , analytical chemistry (journal) , substrate (aquarium) , semiconductor , optoelectronics , nanotechnology , chemistry , optics , metallurgy , physics , quantum mechanics , geology , oceanography , chromatography
In this article, we report on the laser‐induced formation of both C49 and C54 TiSi 2 films with fine grains using Q‐switched Nd : YAG laser irradiation from Ti/Si samples. The films formed were characterized with micro‐Raman spectroscopy, high‐resolution transmission electron microscopy, energy‐dispersive spectrometry and atomic force microscopy. The TiSi 2 films synthesized are single‐phased and thin, with fine grains and a smooth film/substrate interface on the atomic scale. The process is likely to proceed via a solid‐state reaction rather than liquid‐phase intermixing. Our results demonstrate the unique advantages of a laser annealing technique and its potential in deep submicron semiconductor technology. Copyright © 1999 John Wiley & Sons, Ltd.