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Valence‐band offsets of III–V alloy heterojunctions
Author(s) -
Wang HuiQiong,
Zheng JinCheng,
Wang RenZhi,
Zheng YongMei,
Cai ShuHui
Publication year - 1999
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199908)28:1<177::aid-sia602>3.0.co;2-t
Subject(s) - heterojunction , valence band , valence (chemistry) , semiconductor , chemistry , semimetal , condensed matter physics , electronic band structure , band gap , direct and indirect band gaps , alloy , quasi fermi level , cluster expansion , materials science , optoelectronics , physics , thermodynamics , organic chemistry
Valence band offsets at the heterointerface of lattice‐matched alloy semiconductors are investigated with theoretical calculation, which is based on average bond energy theory in conjunction with a cluster expansion method. The predicted relative valence band positions of a wide range of III–V alloys are presented. The variation law of valence band offsets with composition is studied. Some trends of relative valence band positions are also presented. The theoretical results are in very good agreement with relevant experimental data. The table and figures summarizing the variation of valence band positions should be very useful in the design of novel heterostructure electronic and optical devices. Copyright © 1999 John Wiley & Sons, Ltd.