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Method of metal–insulator–semiconductor structure interface analysis
Author(s) -
Bondarenko G. G.,
Andreev V. V.,
Loskutov S. A.,
Stolyarov A. A.
Publication year - 1999
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199908)28:1<142::aid-sia593>3.0.co;2-1
Subject(s) - interface (matter) , insulator (electricity) , semiconductor , voltage , electronic band structure , optoelectronics , materials science , amplitude , condensed matter physics , electrical engineering , optics , engineering , physics , composite material , capillary number , capillary action
The method of metal–insulator–semiconductor (MIS) structure interface analysis, based on applying a direct current pulse of preset amplitude to a MIS structure, is proposed. The variation of the voltage across the MIS structure is recorded while the current flows. The method allows measurement of interface characteristics such as the interface states density, the flat band voltage, the surface potential value for a given bias and the potential barrier height on the injection interface. In addition, the method enables us to determine the charge degradation parameters of the MIS structure under and after high‐field stressing. Copyright © 1999 John Wiley & Sons, Ltd.