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Rutherford backscattering spectrometry channeling study of ion‐irradiated 6H‐SiC
Author(s) -
Jiang W.,
Weber W. J.,
Thevuthasan S.,
McCready D. E.
Publication year - 1999
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199904)27:4<179::aid-sia459>3.0.co;2-1
Subject(s) - rutherford backscattering spectrometry , irradiation , fluence , ion , amorphous solid , annealing (glass) , analytical chemistry (journal) , materials science , atomic physics , chemistry , crystallography , nuclear physics , composite material , physics , organic chemistry , chromatography
Single‐crystal 6H‐SiC (α‐SiC)wafers were irradiated with He + , C + and Si + ions to fluences ranging from 7.5×10 17 to 1×10 20 ions m −2 atvarious temperatures (160–870 K). Damage accumulationand subsequent defect annealing (up to 1170 K) have beenstudied using in situ 2.0 MeV He + Rutherfordbackscattering spectrometry combined with ion channeling(RBS/C) methods. The defect concentration at the damagepeak is observed to increase sigmoidally with increasing ion fluenceduring irradiation at low temperatures. The isochronal recovery ofirradiation damage induced at low temperatures is observed to followan exponential dependence on temperature. The relative disorderaccumulated under 550 keV C + ion irradiation as afunction of irradiation temperature exhibits a significant decreasebetween 300 K and 670 K. Irradiation with 550 keV Si + at 180 K to a fluence of 6.0×10 19 Si + m −2 produces an amorphous layer extending fromthe surface to a depth of 0.6 μm. The thickness of this amorphouslayer decreases linearly with annealing temperature up to 870 K. Atlow ion fluences, the defects produced by He + irradiation at 160 K are more difficult to anneal at 300 K than thoseproduced by Si + irradiation, which suggests thattrapping of helium may inhibit recombination. Copyright © 1999John Wiley & Sons, Ltd.