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Study on interfacial reaction of Ti/AlN by SIMS, RBS and XRD
Author(s) -
Yue Ruifeng,
Wang Yan,
Wang Youxiang,
Chen Chunhua
Publication year - 1999
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199902)27:2<98::aid-sia476>3.0.co;2-1
Subject(s) - materials science , ceramic , secondary ion mass spectrometry , annealing (glass) , analytical chemistry (journal) , metal , ternary operation , electron beam physical vapor deposition , ion , metallurgy , thin film , chemistry , nanotechnology , organic chemistry , chromatography , computer science , programming language
A 200 nm Ti film was deposited on a polished AlN ceramic substrateat 200 °C by electron beam evaporation and then annealed underhigh vacuum conditions. The MCs + ‐SIMStechnique (detecting MCs + secondary ions underCs + primary ion bombardment, where M is the elementto be analysed), RBS and x‐ray diffraction(XRD) measurements were employed to probe the solidinterfacial reaction between Ti and AlN from 200 °C to 850°C, and the variation of interfacial composition distributionwith annealing temperature and time was given. Ternary aluminideswere discovered and the formation and development of the aluminideswere observed in the interfacial region. The results indicate thatthe MCs + ‐SIMS technique is an effective methodto study the interfacial reaction between metal and ceramic.Copyright © 1999 John Wiley & Sons, Ltd.