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Atomic force microscopy investigation of the O 2 + ‐induced surface topography of InP
Author(s) -
Pan J. S.,
Tay S. T.,
Huan C. H. A.,
Wee A. T. S.
Publication year - 1998
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199811)26:12<930::aid-sia440>3.0.co;2-o
Subject(s) - sputtering , indium , ion , indium phosphide , diffusion , chemistry , atomic force microscopy , surface diffusion , analytical chemistry (journal) , sputter deposition , materials science , atomic physics , thin film , optoelectronics , nanotechnology , adsorption , physics , organic chemistry , chromatography , thermodynamics , gallium arsenide
The surface topography development of InP as a function of O 2 + ion energy and incident angle was investigated using atomic force microscopy (AFM). Cone formation was found to be the dominant surface feature under various O 2 + ion bombarding conditions. However, variations in the density and size of the cones at different O 2 + ion bombardment conditions were observed. The variation of surface topography with O 2 + ion bombardment conditions is correlated with changes in InP surface composition. The results support an intrinsic model of cone formation, which postulates that the sputtering of InP causes In enrichment at the surface due to the preferential sputtering of phosphorus from InP. Furthermore, radiation‐enhanced surface diffusion results in agglomeration of indium atoms into indium clusters. These indium clusters seed the development of sputter cones due to the difference in sputter rates of InP and indium. © 1998 John Wiley & Sons, Ltd.