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Deposition and growth of Ag on Si(111) surfaces studied by optical second‐harmonic generation
Author(s) -
Pedersen Kjeld,
Tomas Corinne,
Morgen Per
Publication year - 1998
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199811)26:12<872::aid-sia428>3.0.co;2-w
Subject(s) - substrate (aquarium) , passivation , monolayer , second harmonic generation , layer (electronics) , deposition (geology) , island growth , thin film , materials science , oscillation (cell signaling) , chemistry , analytical chemistry (journal) , optics , nanotechnology , epitaxy , physics , laser , organic chemistry , paleontology , biochemistry , oceanography , sediment , geology , biology
Optical second‐harmonic generation has been used to follow in situ the growth of thin Ag films deposited on Si(111) under various substrate conditions and temperatures. This method is particularly sensitive to the microscopic structure of the deposited Ag films. Thus, island formation is found to enhance the second‐harmonic signal, and strongly temperature‐dependent island formations were indeed observed at lower Ag coverages. For a film thickness above 25 monolayers, identical film roughness characteristics were found for growth temperatures between 200 and 450 K and for different types of substrate reconstruction. A layer‐by‐layer growth mode can be obtained for low substrate temperatures or for surface passivation by oxygen or hydrogen. In such cases the second‐harmonic signal oscillates. The period of oscillation is 10 monolayers. These oscillations are due to the formation of quantum‐well states in the film. © 1998 John Wiley & Sons, Ltd.