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Ion‐beam‐induced crystallization of carbon‐implanted silicon studied by auger electron spectroscopy
Author(s) -
Steffen Hans Joachim
Publication year - 1998
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199810)26:11<825::aid-sia434>3.0.co;2-8
Subject(s) - auger electron spectroscopy , silicon , materials science , analytical chemistry (journal) , amorphous solid , crystallization , ion implantation , irradiation , channelling , ion , chemistry , crystallography , optoelectronics , physics , organic chemistry , chromatography , nuclear physics
The influence of high‐energy Si + irradiation on carbon‐implanted silicon at low temperature was studied. C + Ions of kinetic energy 25 keV were implanted into Si(100) at room temperature with a dose density of 1×10 17 ions cm −2 after amorphization of the surface region by Ge + implantation at 200 keV. Subsequently, the amorphous and substoichiometric silicon–carbon matrix was subjected to a bombardment with 300 keV Si + at 400°C to generate ion‐beam‐induced epitaxial crystallization. Rutherford backscattering spectroscopy combined with channelling disclosed the migration of the recrystallization front from the underlying amorphous silicon substrate up to the carbon‐rich layer in dependence on the Si + dose. Auger electron spectroscopy (AES) in combination with rotational sputter depth profiling provided detailed information about the depth‐dependent composition, the different chemical states of the elements and the synthesized phases. The electron spectra reveal SiC phase formation with a corresponding electron density derived from plasmon energy losses. The plasmon‐loss features in the Si LVV and KL 23 L 23 spectra indicate the presence of fine‐dispersed silicon carbide precipitates of average size ∽0.5–3 nm in a silicon–carbon matrix. Although a beneficial effect of Si + irradiation on crystallization of the entire implantation zone could not be observed for dose densities ⩽1×10 17 ions cm −2 , this study demonstrates the successful application of AES for the characterization of heterogeneous materials with embedded nanoparticles in the matrix. © 1998 John Wiley & Sons, Ltd.