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Quantitative chemical depth profiles of ZrN/BN multilayers
Author(s) -
Sanz J. M.,
Prieto P.,
Quiros C.,
Elizalde E.,
Fernandez A.,
PerezCasero R.
Publication year - 1998
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199810)26:11<806::aid-sia426>3.0.co;2-2
Subject(s) - auger electron spectroscopy , transmission electron microscopy , sputtering , zirconium , analytical chemistry (journal) , spectroscopy , electron spectroscopy , auger , x ray photoelectron spectroscopy , chemistry , chemical state , oxygen , materials science , thin film , atomic physics , inorganic chemistry , nanotechnology , chemical engineering , physics , organic chemistry , chromatography , quantum mechanics , nuclear physics , engineering
Multilayers of ZrN/BN have been deposited on Si(100) using a double ion beam sputtering system. The multilayers have been characterized by transmission electron microscopy, Rutherford backscattering spectroscopy and Auger electron spectroscopy (AES) depth profiles in order to get a quantitative analysis of the components and contaminants in the different layers and at their respective interfaces. Factor analysis is used to deconvolute the different chemical states of the components and to identify secondary phases and compounds that determine the quality of the multilayer. Two secondary phases have been observed at the different interfaces: one is associated with the incorporation of oxygen, mainly in the zirconium layer, and leads to the formation of ZrN x O y . In addition we have observed that Ar bombardment during the AES depth profile leads to the formation of ZrB x N y in all the interfaces. © 1998 John Wiley & Sons, Ltd.