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Initial adsorption of trimethylsilane on Ge(100) surfaces
Author(s) -
Qi Y.,
Sulak J. L.,
Durrer W. G.,
Craig J. H.,
Wang P. W.
Publication year - 1998
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199802)26:2<113::aid-sia350>3.0.co;2-u
Subject(s) - x ray photoelectron spectroscopy , trimethylsilane , adsorption , electronegativity , germanium , molecule , chemisorption , chemistry , langmuir , crystallography , analytical chemistry (journal) , silicon , chemical engineering , organic chemistry , engineering
Trimethylsilane (TMSiH) was adsorbed onto a Ge(100) surface at a temperature of −150±3°C and x‐ray photoelectron spectroscopy (XPS) was used to study the resulting surface species as functions of the TMSiH exposure in Langmuir (L). The core‐level C 1s, Si 2p and Ge 3d photoelectrons were monitored after each dosing. It was observed that the C–C bonds are the dominant species formed at the low doses of TMSiH. The second abundant species at the low coverage is the C–Ge bond. This indicated dissociative adsorption of TMSiH molecules onto a clean Ge(100) surface, which is similar to the adsorption of TMSiH molecules onto an Si(100) surface. As the dose increases, the Si–C species gradually increase due to physisorbed TMSiH on top of the C–C‐ and C–Ge‐covered surface. This study clearly reveals the growth processes of TMSiH on a Ge(100) surface. The electronegativities of C, Si and Ge and the bond strengths of C–C, C–Si and C–Ge were invoked to discuss the initial formation of C–C and C–Ge on the Ge(100) surface. © 1998 John Wiley & Sons, Ltd.