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Ta 2 O 5 /SiO 2 multilayered thin film on Si as a proposed new reference material for SIMS depth profiling
Author(s) -
Kim Kyung Joong,
Moon Dae Won
Publication year - 1998
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199801)26:1<9::aid-sia341>3.0.co;2-i
Subject(s) - sputtering , secondary ion mass spectrometry , materials science , thin film , transmission electron microscopy , profiling (computer programming) , analytical chemistry (journal) , silicon , ion , optoelectronics , chemistry , nanotechnology , organic chemistry , chromatography , computer science , operating system
Abstract A delta oxide multilayered thin film is proposed as a new reference material for SIMS depth profiling. This material is composed of seven thick Ta 2 O 5 layers of 18 nm separated by 1 nm SiO 2 delta layers. The surface of the thin film was very flat and all the interfaces were sharp according to atomic force microscopy (AFM) and transmission electron microscopy (TEM). In SIMS depth profiling, the dynamic range of the Si + ion signal at the SiO 2 layer was large enough to define the depth resolution. The surface topographic development after ion beam sputtering was negligible under various sputtering conditions, as observed by AFM. This was well correlated with the result that there is no significant deterioration of SIMS interface resolution with sputter depth. This reference material can be useful in SIMS depth profiling analysis to optimize the experimental parameters for a better depth resolution and to calibrate the sputtering rate. © 1998 John Wiley & Sons, Ltd.