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Optical in situ monitoring of wet chemical etching
Author(s) -
Waclavek Ján,
Krausko Gabriel,
Škriniarová Jaroslava
Publication year - 1998
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199801)26:1<56::aid-sia348>3.0.co;2-j
Subject(s) - etching (microfabrication) , heterojunction , epitaxy , monochromatic color , materials science , optoelectronics , etch pit density , in situ , isotropic etching , semiconductor , calibration , interference (communication) , nanotechnology , optics , chemistry , layer (electronics) , physics , electrical engineering , engineering , channel (broadcasting) , quantum mechanics , organic chemistry
Optical in situ monitoring, exploiting the interference of monochromatic radiation reflected from the surface being chemically etched and from the deeper interfaces of semiconductor layers, was utilized to monitor the etch process of layered AlGaAs/AlAs/GaAs structures. The described method is applicable in controlled etching of heterostructures in order to terminate the etch process precisely and it is also suitable for analysis and diagnostics of epitaxially grown layers and for calibration of etch rates. © 1998 John Wiley & Sons Ltd.