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SIMS Detection in the 10 12 Atoms cm ‐3 Range
Author(s) -
Gnaser Hubert
Publication year - 1997
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199709)25:10<737::aid-sia294>3.0.co;2-m
Subject(s) - sputtering , ion , ionization , yield (engineering) , chemistry , analytical chemistry (journal) , secondary ion mass spectrometry , atom (system on chip) , range (aeronautics) , atomic physics , doping , fast atom bombardment , mass spectrometry , flux (metallurgy) , materials science , physics , thin film , nanotechnology , optoelectronics , metallurgy , composite material , organic chemistry , chromatography , computer science , embedded system
A detection limit of ∽10 12 atoms cm ‐3 in secondary ion mass spectrometry (SIMS) is demonstrated using a Te‐doped GaAs specimen. The absence of mass interferences and very high ion yields are shown to be mandatory for the analysis of such low concentration levels. For the present sputtering (14.5 keV Cs + primary ions) and instrumental conditions (transmission of ∽0.15–0.2), the useful yield (detected ions per sputtered atom) for Te − secondary ions amounts to 0.11. The ionization probability is thus estimated to be in the range of 50–70% and indicates that secondary ions can constitute a sizeable (or even dominant) fraction of the sputtered flux. © 1997 by John Wiley & Sons, Ltd.