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Waveguide Effect on the Image Formation Process in Near‐field Photocurrent Spectroscopy of Semiconductor Laser Diodes
Author(s) -
Richter A.,
Lienau Ch.,
Tomm J. W.
Publication year - 1997
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199706)25:7/8<573::aid-sia275>3.0.co;2-y
Subject(s) - photocurrent , laser , diode , optoelectronics , optics , materials science , waveguide , semiconductor , semiconductor laser theory , near and far field , laser diode , spectroscopy , physics , quantum mechanics
Near‐field photocurrent spectra of high‐power laser diode arrays with different wave‐guide characteristics are reported. Subwavelength spatial resolution is achieved by using a near‐field fibre probe as the excitation source. The effect of the laser diode waveguide structure and of surface recombination processes on the near‐field photocurrent image formation is discussed and analysed in terms of a beam propagation model. Experiments on laser diodes before and after accelerated ageing demonstrate the potential of the technique for analysing microscopic defect formation processes in optoelectronic devices.© 1997 John Wiley & Sons, Ltd.