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Investigation of Electrical Double Layers on SIO 2 Surfaces by Means of Force vs . Distance Measurements
Author(s) -
Hüttl Grit,
Beyer Dirk,
Müller Eberhard
Publication year - 1997
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199706)25:7/8<543::aid-sia268>3.0.co;2-t
Subject(s) - dlvo theory , radius , electrolyte , ceramic , layer (electronics) , silicon , double layer (biology) , materials science , chemistry , chemical physics , nanotechnology , analytical chemistry (journal) , composite material , colloid , optoelectronics , chromatography , electrode , computer security , computer science
The formation of electrical charges at solid/liquid interfaces results in a diffuse electrical double layer close to the solid surface. This layer determines, for example, the behaviour of ceramic particles in aqueous media and the effective pore radius of membranes acting in liquids. The SiO 2 /SiO 2 system is used to demonstrate that linear measurements using atomic force microscopy are suited for characterizing double layers at real surfaces. It has to be taken into consideration that the tip itself, which is acting as the probe, is also surrounded by a double layer and responds to the composition of the electrolyte in a material‐specific way. For this reason an oxidized silicon tip was used for the present investigations, so that tip and sample consisted the same material. In this way it is possible to obtain results that can be evaluated easily and compared with the DLVO theory.© 1997 John Wiley & Sons, Ltd.