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AFM Characterization of Ta‐based Diffusion Barriers for Use in Future Semiconductor Metallization
Author(s) -
Fischer D.,
Meissner O.,
Bendjus B.,
Schreiber J.,
Stavrev M.,
Wenzel C.
Publication year - 1997
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199706)25:7/8<522::aid-sia262>3.0.co;2-f
Subject(s) - nanocrystalline material , auger electron spectroscopy , materials science , amorphous solid , microstructure , thin film , tetragonal crystal system , sputtering , characterization (materials science) , atomic force microscopy , diffusion , analytical chemistry (journal) , nanotechnology , crystallography , metallurgy , chemistry , crystal structure , physics , chromatography , nuclear physics , thermodynamics
In this paper the investigation of r.f.‐sputter‐deposited Ta, Ta‐N and Ta‐N‐O thin films is presented. Using atomic force microscopy in combination with sheet resistance measurements, Auger electron spectroscopy and x‐ray diffraction, the thin film properties and microstructure are examined. Two crystalline modifications of Ta (tetragonal β‐Ta and bcc α‐Ta) are reported. By incorporation of nitrogen and/or oxygen into the Ta films, nanocrystalline and quasi‐amorphous structures can be achieved. Finally, the usefulness of the films as diffusion barriers in Cu‐based metallization systems is described.© 1997 John Wiley & Sons, Ltd.