Premium
Accurate RBS Measurements of the Indium Content of InGaAs Thin Films
Author(s) -
Jeynes C.,
Jafri Z. H.,
Webb R. P.,
Kimber A. C.,
Ashwin M. J.
Publication year - 1997
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199704)25:4<254::aid-sia232>3.0.co;2-f
Subject(s) - thin film , indium , analytical chemistry (journal) , standard deviation , content (measure theory) , materials science , relative standard deviation , doping , range (aeronautics) , chemistry , mathematics , optoelectronics , nanotechnology , statistics , mathematical analysis , composite material , chromatography , detection limit
Rutherford backscattering is used to obtain absolute compositional data from InGaAs thin films without any reference standards. Carbon‐doped In x Ga 1‐ x As thin films with compositions varying between 0.02< x <0.4 have been analysed and values of x obtained with an estimated accuracy of ∽1% in most cases. The observed variation in two measurements of a set of nine samples with a range of values of x has a mean of 1.000 and a standard deviation of 2.2%. This observed error is not inconsistent (at the 5% significance level) with the estimated error. The analytical method described is valid for many compound thin films. © 1997 by John Wiley & Sons, Ltd.