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Cs + Ion Beam Damage of Poly(vinyl chloride) and Poly(methyl methacrylate) Studied by High Mass Resolution ToF‐SIMS
Author(s) -
Briggs D.,
Fletcher I. W.
Publication year - 1997
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199703)25:3<167::aid-sia220>3.0.co;2-j
Subject(s) - methyl methacrylate , vinyl chloride , secondary ion mass spectrometry , poly(methyl methacrylate) , quadrupole , analytical chemistry (journal) , ion , chloride , mass spectrum , mass spectrometry , silicon , chemistry , resolution (logic) , materials science , polymer chemistry , monomer , atomic physics , composite material , polymer , optoelectronics , copolymer , organic chemistry , physics , chromatography , artificial intelligence , computer science
Changes in the SIMS spectra of poly(vinyl chloride) (PVC) and poly(methyl methacrylate) (PMMA) as a function of 8 keV Cs + dose have been studied in the range 10 11 –5×10 13 ions cm ‐2 . In order to resolve uncertainties in previous studies (based on quadrupole SIMS and insulating samples) this work has utilized a high mass resolution ToF‐SIMS instrument and films on silicon sufficiently thin to obviate the need for surface potential control (charge neutralization). The form of the damage curves has been compared with a recently introduced model of damage development based on the statistics of bond breaking. © 1997 by John Wiley & Sons, Ltd.