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Depth Profiling by Combined SIMS–ESDMS Analysis: a New Surface Analytical Technique
Author(s) -
Seki S.,
Sumiya H.,
Muto K.,
Tamura H.
Publication year - 1997
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199703)25:3<155::aid-sia216>3.0.co;2-9
Subject(s) - analytical chemistry (journal) , static secondary ion mass spectrometry , secondary ion mass spectrometry , sputtering , chemistry , wafer , desorption , monolayer , ion beam , ion , ion beam analysis , thin film , materials science , adsorption , optoelectronics , nanotechnology , organic chemistry , chromatography , biochemistry
Electron‐stimulated desorption mass spectrometry (ESDMS), a new technique based on the mass analysis of ions desorbed by a high‐energy (several keV) electron beam, has analytical features that complement SIMS. The ESDMS has high sensitivity in the surface analysis of both adsorbates and the first one or two monolayers of substrate constituents. The variations in ESDMS signal intensities and in the sampling surface depth with time were negligible even in a one‐monolayer sample. Using this combined SIMS–ESDMS technique, depth profiling analysis was performed for several different metal layers deposited on wafers and for a boron‐implanted wafer. The sample depth was changed by sputtering with an ion beam, and the surface analysis at each depth was done by ESDMS with the ion beam off. The ion profiles by SIMS–ESDMS closely coincided with the SIMS profiles. The SIMS–ESDMS technique should be particularly useful for thin layered samples, because the signal‐to‐noise ratio can be improved by accumulating the ESDMS signals for as long as required without changing the sampling depth under continuous bombardment by the electron beam. © 1997 by John Wiley & Sons, Ltd.