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X‐ray Photoelectron Spectroscopy Depth Profiling of Aluminium Nitride Thin Films
Author(s) -
Butcher K. S. A.,
Tansley T. L.,
Li Xin
Publication year - 1997
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199702)25:2<99::aid-sia212>3.0.co;2-u
Subject(s) - x ray photoelectron spectroscopy , analytical chemistry (journal) , argon , aluminium , nitride , thin film , nitrogen , aluminium nitride , materials science , silicon , silicon nitride , carbon nitride , layer (electronics) , chemistry , chemical engineering , metallurgy , composite material , nanotechnology , catalysis , chromatography , organic chemistry , engineering , biochemistry , photocatalysis
Aluminium nitride thin films grown at room temperature on degenerate silicon (conducting) substrates have been studied using XPS. The hydrolysis layer at the surface of the AlN was examined using valence band measurements, and the effect of 5 kV argon ion milling used to remove the hydrolysis layer was scrutinized using angle‐resolved XPS. The N/Al ratios found from the angle‐resolved measurements indicate nitrogen depletion from the surface of the milled samples, whereas O/Al ratios indicate no such depletion of oxygen. After argon ion milling, carbon uptake from the ultrahigh vacuum analysis chamber was found to be significant. © 1997 by John Wiley & Sons, Ltd.