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Ion Beam Modification of InSe Surfaces
Author(s) -
Brojerdi G.,
Tyuliev G.,
Fargues D.,
Eddrief M.,
Balkanski M.
Publication year - 1997
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199702)25:2<111::aid-sia215>3.0.co;2-w
Subject(s) - indium , x ray photoelectron spectroscopy , ion beam , ion beam deposition , layer (electronics) , substrate (aquarium) , ion , oxide , molecular beam epitaxy , metal , thin film , beam (structure) , ion beam mixing , materials science , chemistry , analytical chemistry (journal) , optoelectronics , epitaxy , nanotechnology , optics , chemical engineering , metallurgy , organic chemistry , oceanography , physics , geology , engineering
Ion beam modification of InSe (single crystals and molecular beam epitaxy‐grown thin films on Si(111) substrate) by Ar + and O + (3 keV beam energy) is studied by XPS. The Ar + ion bombardment produces surface layer enrichment in metallic indium with a gradient of concentrations, i.e. the top surface layer (10–15 Å) contains less metallic indium as compared to the modified layers under it. Bombardment with O + ions produces an indium oxide layer (∽20 Å thick) on top of InSe. The relevance of the observed ion beam modifications to the preparation of solid state microbattery structures is discussed. © 1997 by John Wiley & Sons, Ltd.