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Investigation of the Interfacial Region Formed During ZnO Growth on Si(100) Substrate Using Single‐source CVD
Author(s) -
Koch M. H.,
Mar G. L.,
Hartmann A. J.,
Lamb R. N.
Publication year - 1996
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(19960916)24:9<675::aid-sia166>3.0.co;2-z
Subject(s) - materials science , substrate (aquarium) , chemical vapor deposition , adhesion , chemical engineering , deposition (geology) , thin film , nanotechnology , composite material , paleontology , oceanography , sediment , geology , engineering , biology
The growth process of ZnO films on Si(100) by single‐source chemical vapour deposition (CVD) was investigated. During the initial stages of growth (film thickness <30Å), oxidation of the Si substrate was observed which resulted in an interfacial region consisting of ZnO and Si oxides. For film thicknesses in excess of 40 Å the composition of the film approaches that of a continuous ZnO film. It is suggested that the mixed interfacial region strongly influences the adhesion of the film on the substrate by providing Zn–O–Si‐type bonds. The oxidation of the substrate during the initial film growth may have direct implications on the type of contact layers that can be used in ZnO thin‐film devices using single‐source CVD techniques.