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Structural Characterization of Pd‐doped SnO 2 Thin Films Using XPS
Author(s) -
Cao Xiaoping,
Cao Lili,
Yao Wenqing,
Ye Xiaoyan
Publication year - 1996
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(19960916)24:9<662::aid-sia155>3.0.co;2-c
Subject(s) - x ray photoelectron spectroscopy , thin film , thermogravimetric analysis , dopant , doping , materials science , analytical chemistry (journal) , auger electron spectroscopy , palladium , atmospheric temperature range , chemistry , nanotechnology , nuclear magnetic resonance , catalysis , optoelectronics , physics , biochemistry , organic chemistry , chromatography , meteorology , nuclear physics
In this paper, the structures of Pd‐doped SnO 2 thin films prepared by a Sol‐Gel technique are characterized by x‐ray photoelectron spectroscopy, scanning Auger microscopy, x‐ray diffraction and differential thermal analysis plus thermogravimetric analysis. It is observed that film structure and the chemical states of Pd and Sn in the thin films change with the temperature of thermal treatment. In the 250–600°C temperature range, palladium exists in a mixed state, (PdO and PdO 2 ) in the film. Dopant Pd decreases the Fermi level of the SnO 2 semiconductor by ∽0.20 eV.