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XPS Study of Mn Thin Films Grown on GaAs(001) Surfaces
Author(s) -
Dong G. S.,
Xu M.,
Chen Y.,
Jin X. F.,
Wang Xun
Publication year - 1996
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(19960916)24:9<653::aid-sia146>3.0.co;2-8
Subject(s) - x ray photoelectron spectroscopy , overlayer , substrate (aquarium) , layer (electronics) , thin film , materials science , chemical composition , analytical chemistry (journal) , chemical state , chemistry , chemical engineering , nanotechnology , oceanography , organic chemistry , chromatography , geology , engineering
The composition–depth profile studies using x‐ray photoelectron spectroscopy (XPS) are carried out for Mn thin films grown on GaAs(001) substrates at different substrate temperatures. The experimental results show that due to the interdiffusion and chemical reaction, an Mn–Ga–As mixed layer is formed between the Mn thin film and GaAs substrate. The thickness of the Mn–Ga–As mixed layer for the sample grown at 300 K is much thinner than that grown at 400 K. Because of the strong interdiffusion and chemical reaction, the overlayer on the GaAs substrate for the sample grown at 450 K is dominated by an Mn–Ga–As mixed layer, and no pure Mn area can be found on the top of the surface. The formation mechanism of γ‐Mn grown on GaAs(001) surfaces is discussed.