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Characterization of the Optical Properties and Composition of TiN x Thin Films by Spectroscopic Ellipsometry and X‐ray Photoelectron Spectroscopy
Author(s) -
Bendavid A.,
Martin P. J.,
Netterfield R. P.,
Kinder T. J.
Publication year - 1996
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(19960916)24:9<627::aid-sia149>3.0.co;2-r
Subject(s) - x ray photoelectron spectroscopy , ellipsometry , analytical chemistry (journal) , materials science , thin film , stoichiometry , deposition (geology) , spectroscopy , characterization (materials science) , chemistry , nuclear magnetic resonance , nanotechnology , paleontology , physics , chromatography , quantum mechanics , sediment , biology
Thin films of TiN xwith 0.34< x< 1.19 were deposited on silicon substrates by a filtered arc deposition process. Spectroscopic ellipsometry (SE) in the energy region 1.5–3.5 eV was used to measure the optical properties of the films. X‐ray photoelectron spectroscopy (XPS) was used to determine the relative atomic concentration and the chemical states of the elements. The dielectric function ε(ω) measured by ellipsometry gives the optical response of TiN xfilms and valuable information on their chemical composition, which is also verified by XPS. The plasma energy ω p of TiN xfilms was found to depend strongly on the N/Ti ratio and this is correlated with the value of x as determined by XPS and Rutherford backscattering spectroscopy (RBS). The results show that, via the calibration, spectroscopic ellipsometry may be used to estimate the stoichiometry of deposited TiN xfilms.