Premium
X‐ray Photoelectron Spectroscopic Studies of Sulphur‐passivated GaAs Surfaces
Author(s) -
Wang Xun,
Hou XiaoYuan,
Li ZheShen,
Chen XiYing
Publication year - 1996
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(19960916)24:9<564::aid-sia148>3.0.co;2-1
Subject(s) - passivation , x ray photoelectron spectroscopy , sulfur , substrate (aquarium) , durability , materials science , x ray , chemistry , chemical engineering , metallurgy , nanotechnology , layer (electronics) , optics , physics , composite material , engineering , geology , oceanography
Three new sulphur‐passivation techniques of GaAs surfaces are presented to solve the problem of longevity and durability. To explore the passivation mechanism, XPS in conjunction with other techniques are employed to study the chemical compositions of Ga and As atoms near the passivation film/substrate interfaces.