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Characterization and Application of the Vapor Phase Decomposition Technique for Trace Metal Analysis on Silicon Oxide Surfaces
Author(s) -
Hall L. H.,
Sees J. A.,
Schmidt B. L.
Publication year - 1996
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199608)24:8<511::aid-sia167>3.0.co;2-t
Subject(s) - analytical chemistry (journal) , chemistry , silicon , graphite furnace atomic absorption , chemical vapor deposition , decomposition , ammonium hydroxide , atomic absorption spectroscopy , etching (microfabrication) , inorganic chemistry , hydrogen peroxide , detection limit , physics , organic chemistry , chromatography , quantum mechanics , layer (electronics)
Abstract Vapor phase decomposition–droplet surface etching–graphite furnace atomic absorption spectroscopy (VPD–DSE–GFAAS) is discussed as a technique for the determination of low levels of metals in chemical oxides on silicon surfaces. The VPD–DSE–GFAAS technique was found to be statistically equivalent to results obtained by the standard surface techniques of total reflectance x‐ray fluorescence spectroscopy (TXRF) and SIMS. The capability of the VPD–DSE–GFAAS technique has been extended to detection limits in the 10 7 to low 10 9 atom cm ‐2 range. A positive linear relationship was found for iron, calcium, zinc and aluminum deposited on a silicon wafer from an ammonium hydroxide–hydrogen peroxide–water (SC1) solution. Sodium and potassium deposition from SC1 solutions was found to be independent of solution concentrations. Deposition for these metals appeared to be primarily related to localized micron‐sized nuclei deposits and not to adsorption on an atomic scale.