Premium
SIMS Depth Profiling of Delta‐doped Layers in Silicon
Author(s) -
Smirnov V. K.,
Simakin S. G.,
Potapov E. V.,
Makarov V. V.
Publication year - 1996
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199607)24:7<469::aid-sia140>3.0.co;2-u
Subject(s) - doping , silicon , profiling (computer programming) , secondary ion mass spectrometry , delta , materials science , analytical chemistry (journal) , mineralogy , chemistry , optoelectronics , environmental chemistry , mass spectrometry , computer science , physics , chromatography , astronomy , operating system
Boron and germanium δ‐doped silicon samples were studied using SIMS depth profiling on a Cameca IMS‐4F instrument with O 2 + , N 2 + and Cs + primary beams at various energies and incidence angles. The depth resolution characteristics were compared. We show that, with experimental conditions being the same, the N 2 + primary beam provides for better decay lengths, while the leading edges of the profiles turn out to be significantly broadened because of the beam‐induced roughness which develops at an early stage of silicon bombardment by N 2 + ions.The influence of ripple‐like roughness on the SIMS profile shape is considered within the present simple analytical model.The effect of a modified layer on the SIMS profile depth was experimentally investigated. For profiles obtained with an N 2 + primary beam, it was shown that swelling of the modified layer produced by the implantation and trapping of primary particles shifts the profile as a whole toward the surface.