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Ion‐implanted Surface Analysis Reference Materials: Certification of Dose Densities from 10 16 to 10 13 cm ‐2
Author(s) -
Gries Werner H.
Publication year - 1996
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199607)24:7<431::aid-sia133>3.0.co;2-c
Subject(s) - certification , ion , certified reference materials , dosimetry , wafer , microbeam , analytical chemistry (journal) , radiochemistry , materials science , chemistry , nuclear medicine , optics , nanotechnology , physics , detection limit , chromatography , medicine , organic chemistry , political science , law
This German contribution to the VAMAS prenormative project on ion‐implanted reference materials describes a general procedure for the certification of retained dose densities of elements of the third and higher periods of the Periodic Table at levels of foremost technological interest, i.e. 10 16 –10 13 cm ‐2 (i.e. atoms cm ‐2 ), in wafer‐type host materials. The proposed procedure satisfies all requirements of a definitive method and can be readily imple‐mented in many laboratories worldwide. In a first step, a primary reference material (PRM) at several 10 15 cm ‐2 is certified by referencing to a weighed, evenly spread deposit of the analyte by means of wavelength‐dispersive x‐ray fluorescence spectrometry (WD/XFS). All further certification of retained dose densities is relative to this PRM. Dose densities of similar level are certified (relative to the PRM) by means of WD/XFS or electron microbeam analysis (also by Rutherford backscattering spectroscopy if Z impl > Z host ). Dose densities below 10 15 cm ‐2 are certified (relative to the PRM or a substitute) by means of comparative in situ ion dosimetry. Requirements are specified for the deposit, the ion implants, the measurements by WD/XFS and certification by comparative in situ ion dosimetry. The procedure is verified by experiment.