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Factors Affecting the Quantification of Boron in SiO 2 and Si by Sputtered Neutral Mass Spectrometry
Author(s) -
Wise Michael L.,
Moriya Netzer,
Downey Stephen W.
Publication year - 1996
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199606)24:6<371::aid-sia123>3.0.co;2-g
Subject(s) - boron , sputtering , mass spectrometry , analytical chemistry (journal) , silicon , ion , chemistry , secondary ion mass spectrometry , materials science , thin film , nanotechnology , environmental chemistry , chromatography , organic chemistry
Boron implanted in SiO 2 and Si is characterized using sputtered neutral mass spectrometry (SNMS). Non‐resonant, ultrahigh‐intensity postionization finds that a fraction of boron not sputtered as neutral atoms from SiO 2 and Si is partially present in the form of BO and BSi molecules. Total boron detection is matrix sensitive. A deficit in the boron measured in SiO 2 suggests that boron may go partially undetected due to the substantial production of secondary ions during sputtering.