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Use of the Peak‐to‐background Ratio for Quantitative Auger Analysis of Semi‐insulating Polycrystalline Silicon Layers
Author(s) -
Liday Jozef,
Tomek Stanislav,
Vogrinčič Peter,
Mrázik Peter,
Breza Juraj
Publication year - 1996
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(199603)24:3<198::aid-sia95>3.0.co;2-4
Subject(s) - auger , auger electron spectroscopy , polycrystalline silicon , silicon , analytical chemistry (journal) , crystallite , materials science , mass spectrometry , chemistry , atomic physics , optoelectronics , metallurgy , nanotechnology , physics , nuclear physics , layer (electronics) , chromatography , thin film transistor
The work presents the results of quantitative evaluation of Auger electron spectra utilizing the heights of Auger peaks normalized with respect to the background in N ( E ) vs . E distribution curves. The quantification method used was verified on a series of semi‐insulating polycrystalline silicon samples with a variable content of oxygen. The results obtained were compared with those yielded by other procedures of quantitative AES, and by secondary neutral mass spectrometry.