Strain‐Induced Bandgap Narrowing in Crumpled TMDs for NIR Light Detection (Small 20/2025) | Zendy

Katiyar Ajit Kumar | Zendy; Kim Youngjae | Zendy; Kim Beom Jin | Zendy; Choi Jonggyu | Zendy; Hoang Anh Tuan | Zendy; Lee JaeDong | Zendy; Ahn JongHyun | Zendy

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Strain‐Induced Bandgap Narrowing in Crumpled TMDs for NIR Light Detection (Small 20/2025)

Author(s) -

Katiyar Ajit Kumar,

Kim Youngjae,

Kim Beom Jin,

Choi Jonggyu,

Hoang Anh Tuan,

Lee JaeDong,

Ahn JongHyun

Publication year - 2025

Publication title -

small

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.785

H-Index - 236

eISSN - 1613-6829

pISSN - 1613-6810

DOI - 10.1002/smll.202570157

NIR Light Detection In article number 2411378, JaeDong Lee, Jong‐Hyun Ahn, and co‐workers developed graphene/transition metal dichalcogenides (TMDs)/graphene heterostructure‐based strain‐engineered photo sensor devices capable of detecting near‐infra‐red (NIR) radiation. In addition to strain‐induced band gap shrinkage in TMDs, the employed non‐conventional crumpling approach offered exclusive photon management with enhanced light scattering and trapping at the sinusoidal surface, resulting in increased light absorption for NIR wavelengths.

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