Direct CVD Growth of Twisted Graphene: Unveiling Mechanisms and Prospects for Future Applications

Abstract Twisted graphene, renowned for its exceptional physical properties such as insulating states, superconductivity, and the quantized anomalous Hall effect, represents a frontier in quantum materials research. Despite its transformative potential, the scalability of traditional “tear‐and‐stack” fabrication poses significant challenges, limiting widespread application. Recent advances in chemical vapor deposition (CVD) offer a promising alternative, enabling scalable synthesis of high‐quality twisted graphene with advantages in cost, reproducibility, and tunable growth control. However, the fundamental mechanisms governing CVD growth, particularly the role of growth conditions and catalytic substrate in determining the size and twisted angle of twisted graphene, remain inadequately understood. This perspective explores recent progress in overcoming these challenges through dynamic modulation of the CVD growth environment and strategic substrate engineering, emphasizing their role in achieving precise twist angles, large size, and uniform twist angle distribution. By addressing these critical aspects, it is aimed to illuminate pathways for advancing the controlled growth of twisted graphene, facilitating its seamless integration into next‐generation electronic, optoelectronic, and quantum technologies, and driving its transition from a laboratory curiosity to a scalable platform for technological innovation.