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XPS and p‐ARXPS Analysis of Nanometric‐Thick Polyphosphazene Film on Undoped n‐InP 10 15 /cm 3
Author(s) -
Visagli Gianluca,
Etchberry Arnaud,
Frégraux Mathieu,
Gonçalves AnneMarie
Publication year - 2025
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.7389
Subject(s) - x ray photoelectron spectroscopy , polyphosphazene , nuclear chemistry , materials science , analytical chemistry (journal) , chemistry , nanotechnology , crystallography , physics , nuclear magnetic resonance , organic chemistry , polymer , composite material
ABSTRACT In this study, we investigate the formation and characterization of an ultrathin polyphosphazene (PPP) film on undoped n‐type indium phosphide semiconductor (InP) through electrochemical passivation in liquid ammonia (NH₃). The passivation process, driven by photogenerated holes, results in a protective PPP layer on the InP surface. Using a combination of X‐ray photoelectron spectroscopy (XPS) and parallel angle‐resolved XPS (p‐ARXPS), we analyze and discuss the chemical composition and atomic arrangement of the passivating film. The XPS results confirm the presence of phosphorus and nitrogen species forming the PPP layer, while the p‐ARXPS data provide a detailed relative depth profile, revealing an ordered atomic structure perpendicular to the surface. This study reveals at least three different chemical environments of nitrogen depending on the molecular arrangement in PPP.

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