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A High‐Efficiency Ultraviolet Organic Light‐Emitting Diode Employing a Double Boron–Oxygen–Nitrogen‐Based Emitter
Author(s) -
Zhan Feng,
Xu Kewei,
Tsuboi Taiju,
She Yuanbin,
Li Guijie
Publication year - 2025
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.202505328
Subject(s) - oled , full width at half maximum , materials science , ultraviolet , quantum efficiency , photoluminescence , optoelectronics , common emitter , electroluminescence , boron , diode , toluene , analytical chemistry (journal) , photochemistry , chemistry , nanotechnology , organic chemistry , layer (electronics)
Abstract Designing high‐efficiency ultraviolet organic light‐emitting diodes (UV OLEDs) remains challenging due to the need for efficient utilization of triplet excitons while maintaining a wide bandgap. In this study, we designed double boron–oxygen–nitrogen‐based polycyclic aromatic hydrocarbons (dBON‐PAHs) with rigid planar structures and developed a novel UV emitter, BO‐N, featuring hybridized local and charge‐transfer (HLCT) properties. BO‐N exhibited UV emission in toluene solution and 1,3‐di(9 H ‐carbazol‐9‐yl)benzene (mCP) film, with photoluminescence (PL) peaks of 391 and 400 nm and narrow full width at half‐maximum (FWHM) values of 15 and 34 nm, respectively. The device doped with 5 wt% BO‐N achieved a narrowband UV emission with an FWHM of 37 nm, an electroluminescence peak ( λ EL ) of 399 nm, and CIE coordinates of (0.166, 0.030). Moreover, the device attained a record‐high maximum external quantum efficiency (EQE max ) of 18.6% among reported HLCT‐based UV OLEDs with CIE y < 0.05. These findings highlight the great potential of double BON‐PAHs as robust emitters for high‐performance UV OLEDs.
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