Open AccessElastic Relaxation of Coherent InGaN/GaN Interfaces at the Microwire LED Sidewall (Adv. Sci. 19/2025)
Author(s) -
Kim Jongil,
Yeo Jinwook,
Park Bumsu,
Jeong Jeehun,
Ryu Seunghwa,
Oh Sang Ho
Publication year - 2025
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.202570142
Light Emitting Diodes Microwire LEDs offer high luminance and superior pixel density per inch, making them ideal for next‐generation displays. Strain mapping and finite element simulation reveal that interfacial shear strain arises at traction‐free surface of microwire LEDs to assist the elastic relaxation of the misfit strain in InGaN/GaN multiple quantum wells. More details can be found in article number 2408736 by Seunghwa Ryu, Sang Ho Oh, and co‐workers.