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Au/Germanium 1 − x Bismuth x Schottky Diode for Self‐Driven, High Detectivity, and High Responsivity Near‐Infrared Broadband Photodetectors
Author(s) -
Zheng Youbin,
Zhang Dainan,
Liu Shuaicheng,
He Hengji,
Zhou Tingchuan,
Yang Qinghui
Publication year - 2025
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.202403550
Abstract Metal‐semiconductor Schottky diode structures play a crucial role in the development of optoelectronic devices. In recent years, Schottky photodiode‐based photodetectors utilizing molybdenum disulfide (MoS 2 ) have garnered significant attention and are among the most extensively researched options. However, MoS 2 has a notable limitation: its low light absorption in the near‐infrared (NIR) spectrum results in reduced responsivity compared to the visible spectrum. To address this issue and achieve high responsivity, high detectivity, and a broad spectral response for NIR photodetectors, a GeBi‐based Au/Ge 1 − x Bi x Schottky diode photodetector for the first time is proposed. By varying the doping concentration of Bi (x) and subsequently regulating the light absorption of the Ge 1 − x Bi x films in the NIR band, the Ge 0.874 Bi 0.126 photodetector is identified and fabricated with an optimal Bi doping concentration of 12.6%. Testing revealed that within the 800–1200 nm wavelength range, the photodetector exhibits a responsivity range of 2.47 –519.7 AW −1 and a detectivity range of 3.56 × 10 11 Jones to 1.6 × 10 13 Jones. In contrast to most Schottky diode‐based NIR photodetectors, which typically respond to a narrow optical spectrum, the results demonstrate that the photodetector maintains high responsivity and detectivity across the entire 800 to 1200 nm range.
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