Reconfigurable Logic Gate Enabled by Dual‐Gating of Silicon Nanomembrane Field‐Effect Transistors

Abstract Conventional processors often underutilize their computational resources because of the fixed functionality of logic gates; numerous logic gates should be embedded to support all necessary operations, even if many of them are rarely used. Reconfigurable logic gates (RLGs) offer a promising solution as they dynamically switch their logical functionality according to the demands of specific operations. Here, a novel RLG architecture based on the dual‐gate silicon nanomembrane (SiNM) field‐effect transistors (FETs) is proposed. By reconfiguring the electrostatic doping profiles of the SiNM channel, the dual‐gate SiNM FET can operate as three distinct electronic components; a forward‐biased diode, a backward‐biased diode, and a variable resistor. Furthermore, the three dual‐gate SiNM FETs are integrated to implement a single RLG, whose Boolean logic functions can be reconfigured between AND and OR operations. In addition, an array of three RLGs can be used to perform 32‐bit masking operations, thereby validating their effectiveness in digital data processing.