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Exploring the Morphotropic Phase Boundary in HfO 2 ‐Based Ferroelectrics for Advanced High‐k Dielectrics
Author(s) -
Oh Seungyeol,
Jang Hojung,
Habibi Mostafa,
Sung Minchul,
Choi Hyejung,
Kim Seyeon,
Hwang Hyunsang
Publication year - 2025
Publication title -
advanced materials technologies
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.184
H-Index - 42
ISSN - 2365-709X
DOI - 10.1002/admt.202401041
Abstract With the increasing demand for high‐performance computing and storage solutions, industries are under pressure to deliver enhanced‐density, high‐speed, cost‐efficient, and reliable memory technologies. The development of advanced high dielectric constant (high‐k) dielectrics for dynamic random‐access memory (DRAM) remains essential yet challenging, with a need for further advancements on scaling and mass production compatibility. A significant advancement has been the discovery of morphotropic phase boundary (MPB) in HfO 2 ‐based ferroelectrics, offering a potential solution to enduring issues in DRAM capacitor technology. The superior performance of MPB‐based Hf x Zr 1‐x O 2 film systems as high‐k dielectrics (k > 60) provides a promising avenue for advancing DRAM technology. This review article aims to propel DRAM development by detailing the principles of MPB‐based high‐k dielectrics, outlining crucial material and engineering parameters, and addressing the need for precise evaluation and analysis, which have previously been neglected. It also discusses the ongoing challenges and future directions in this field.