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A Highly Stable Organic–Inorganic Hybrid Electron Transport Layer for Ultraflexible Organic Photodiodes
Author(s) -
Wijaya Theodorus Jonathan,
Xiong Sixing,
Sasaki Kosei,
Kato Yutaro,
Mori Kazuma,
Koizumi Mari,
Lee Sunghoon,
Kobayashi Masaki,
Zhou Yinhua,
Fukuda Kenjiro,
Yokota Tomoyuki,
Someya Takao
Publication year - 2025
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202501951
Subject(s) - materials science , photodiode , irradiation , optoelectronics , dark current , layer (electronics) , thermal stability , nanoparticle , chemical engineering , nanotechnology , photodetector , physics , engineering , nuclear physics
Abstract Flexible organic photodiodes (OPDs) are used to detect light in system‐scale demonstrations of skin‐conformable devices. However, the detectivity of OPDs deteriorates under various environmental conditions, such as light irradiation, air exposure, and heating. This decrease in detectivity is observed in OPDs with a widely used sol–gel ZnO (ZnO SG) electron transport layer (ETL), where the dark current at the reverse bias increased by several orders of magnitude. In this study, a low dark current and stable detectivity with respect to the aforementioned external changes are achieved. The enhanced stability stems from the suppression of the increase in dark current realized by using a mixture of an organic polymer, polyethyleneimine (PEIE), and inorganic crystals (ZnO nanoparticles) to create a nanoparticle‐based, Zn‐chelated PEIE (PEI‐Zn NP) as the ETL of the OPDs. The detectivities of OPDs with PEI‐Zn NP are 89%, 84%, and 93% of their original values after light irradiation, air storage, and thermal heating, respectively. In contrast, their ZnO SG counterparts exhibited stabilities of only 9.9%, 55%, and 2.6%, respectively, in the same tests. Furthermore, the use of PEI‐Zn NP ETL in ultraflexible OPDs is demonstrated by the maintained detectivity after 5000 cycles of device bending.