Volatile to Non‐Volatile Switching Transition in Chalcogenides (Adv. Funct. Mater. 23/2025) | Zendy

Zhao Zihao | Zendy; Zhang Mengfei | Zendy; Yang Qun | Zendy; Gotoh Tamihiro | Zendy; Ge Qingqin | Zendy; Shi Nannan | Zendy; Sun Yuting | Zendy; Zhao Jiayi | Zendy; Sui Yanping | Zendy; Jiang Ran | Zendy; Yu Haibin | Zendy; Elliott Stephen R. | Zendy; Song Zhitang | Zendy; Zhu Min | Zendy

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Volatile to Non‐Volatile Switching Transition in Chalcogenides (Adv. Funct. Mater. 23/2025)

Author(s) -

Zhao Zihao,

Zhang Mengfei,

Yang Qun,

Gotoh Tamihiro,

Ge Qingqin,

Shi Nannan,

Sun Yuting,

Zhao Jiayi,

Sui Yanping,

Jiang Ran,

Yu Haibin,

Elliott Stephen R.,

Song Zhitang,

Zhu Min

Publication year - 2025

Publication title -

advanced functional materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 6.069

H-Index - 322

eISSN - 1616-3028

pISSN - 1616-301X

DOI - 10.1002/adfm.202570135

Chalcogenides In article number 2423940, Zhitang Song, Min Zhu, and co‐workers successfully integrate GeTe 16 phase‐change selector switches with GeTe phase‐change memory cells, forming selector/memory arrays for high‐density 3D memory applications. Though both cells share the same elemental constituents (Ge and Te), their distinct compositions enable differentiated functionality—the selector switch drives the memory cell operation.

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