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Electrooptic and converse-piezoelectric properties of epitaxial GaN/Si structures for optoelectronic applications
Author(s) -
Mireille Cuniot-Ponsard,
Irma Saraswati,
S.-M. Ko,
Mathieu Halbwax,
Y.-H. Cho,
Nji Raden Poespawati,
El Hadj Dogheche
Publication year - 2014
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - converse , epitaxy , piezoelectricity , optoelectronics , materials science , wide bandgap semiconductor , silicon , heterojunction , gallium nitride , nanotechnology , composite material , mathematics , geometry , layer (electronics)

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