Open AccessGlobal electro-thermal modelling and circuit-type simulation of SiC Mosfet power devices in short-circuit operation for critical system analysis
Author(s) -
François Boige,
Frédéric Richardeau,
Stéphane Lefebvre
Publication year - 2017
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - mosfet , power mosfet , thermal , electronic engineering , power semiconductor device , power (physics) , electrical engineering , materials science , computer science , engineering , voltage , transistor , physics , quantum mechanics , meteorology
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